aon6414a 30v n-channel mosfet v ds i d (at v gs =10v) 50a r ds(on) (at v gs =10v) < 8m w r ds(on) (at v gs =4.5v) < 10.5m w symbol v ds v gs v 20 gate-source voltage drain-source voltage 30 the aon6414a uses advanced trench technology to provide excellent r ds(on) , low gate charge.this device is suitable for use as a high side switch in smps and general purpose applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s top view 1 2 3 4 8 7 6 5 v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc parameter typ max t c =25c 2.3 12.5 t c =100c junction and storage temperature range -55 to 150 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 17 44 21 v 20 gate-source voltage avalanche energy l=0.05mh c mj avalanche current c 10 a 35 a t a =25c i dsm a t a =70c 140 pulsed drain current c continuous drain current i d 50 30 t c =25c t c =100c power dissipation b p d continuous drain current 31 13 w power dissipation a p dsm w t a =70c 31 1.5 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3.4 53 4 g d s top view 1 2 3 4 8 7 6 5 www.freescale.net.cn 1/6 general description features
symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 1.95 2.5 v i d(on) 140 a 6.6 8 t j =125c 9.5 11.4 8.2 10.5 m w g fs 55 s v sd 0.72 1 v i s 35 a c iss 920 1150 1380 pf c oss 125 180 235 pf c rss 60 105 150 pf r g 0.55 1.1 1.65 w q g (10v) 16 20 24 nc q g (4.5v) 7.6 9.5 11.4 nc q gs 2 2.7 3.2 nc q gd 3 5 7 nc t d(on) 6.5 ns t 2 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 2 ns t d(off) 17 ns t f 3.5 ns t rr 7 8.7 10.5 ns q rr 11 13.5 16 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time i f =20a, di/dt=500a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package . h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. www.freescale.net.cn 2/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 20 40 60 80 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 6v 7v 10v 4v 4.5v 5v 40 0 20 40 60 80 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w w w w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 5 10 15 20 25 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3v 3.5v 6v 7v 10v 4v 4.5v 5v www.freescale.net.cn 3/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =15v i d =20a single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =4 c/w www.freescale.net.cn 4/6
typical electrical and thermal characteristics 17 5 2 10 0 18 0 10 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 70 0.000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c r q ja =53 c/w www.freescale.net.cn 5/6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6
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